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CGHV40180F

Cree
Part Number CGHV40180F
Manufacturer Cree
Description GaN HEMT
Published Dec 3, 2018
Detailed Description CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron m...
Datasheet PDF File CGHV40180F PDF File

CGHV40180F
CGHV40180F

Overview
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits.
The transistor is available in a 2-lead flange package.
PackaPgNe:TCyGpeHsV: 4404108202F3 Typical Performance Over 800 MHz - 1000 MHz (TC = 25˚C), 50 V Parameter 800 MHz 850 MHz 900 MHz Small Signal Gain 25.
6 25.
2 24.
9 Gain @ Pin 34 dBm 20.
4 20.
8 20.
3...


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