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PE0053A

semi one
Part Number PE0053A
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PE0053A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE0053A uses advanced trench technology to provide exc...
Datasheet PDF File PE0053A PDF File

PE0053A
PE0053A

Overview
PE0053A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE0053A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS =55V,ID =3A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 55 ±20 3 10 1.
7 ...


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