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PE2333A

semi one
Part Number PE2333A
Manufacturer semi one
Description P-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PE2333A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2333A uses advanced trench technology to provide exce...
Datasheet PDF File PE2333A PDF File

PE2333A
PE2333A

Overview
PE2333A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2333A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = -12V,ID = -6.
0A RDS(ON) < 28mΩ @ VGS=-4.
5V RDS(ON) <40mΩ @ VGS=-2.
5V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Continuous Drain Current TC =70℃ TA =25℃ ID TA =70℃ Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -12 ±12 -6.
0 -4.
2 -4.
5 -2.
8 -15 1.
0 -55 To ...


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