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PE3406A

semi one
Part Number PE3406A
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PE3406A N-Channel Enhancement Mode Power MOSFET Description The PE3406A uses advanced trench technology to provide exce...
Datasheet PDF File PE3406A PDF File

PE3406A
PE3406A

Overview
PE3406A N-Channel Enhancement Mode Power MOSFET Description The PE3406A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch and PWM applications.
Genera Features ● VDS = 30V,ID = 5.
8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.
5V ● ESD=2500V ● Lead free product is acquired ● Surface mount package Application ●Load switch ●PWM application Schematic diagram Marking and pin assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 30 ±20 5.
8 20 1.
4 -55 To 150 89 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Param...


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