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PE8200

Part Number	PE8200
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	PE8200 N-Channel Enhancement Mode Power MOSFET Description The PE8200 uses advanced trench technology to provide excel...
Datasheet	PE8200 PDF File

Overview

PE8200 N-Channel Enhancement Mode Power MOSFET Description The PE8200 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
General Features ● VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.
5V RDS(ON) < 13mΩ @ VGS=2.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment Application ● Uni-directional load switch ● Bi-directional load switch TSSOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Dra...

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