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PED3310M

semi one
Part Number PED3310M
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PED3310M N-Channel Enhancement Mode Power MOSFET Description The PED3310M uses advanced trench technology to provide ex...
Datasheet PDF File PED3310M PDF File

PED3310M
PED3310M

Overview
PED3310M N-Channel Enhancement Mode Power MOSFET Description The PED3310M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protested.
General Features ● VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.
5V RDS(ON) < 15mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM application ● Load switch Schematic diagram PDFN3.
3x3.
3-8L bottom view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteris...


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