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PED8810M

semi one
Part Number PED8810M
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PED8810M N-Channel Enhancement Mode Power MOSFET Description The PED8810M uses advanced trench technology to provide ex...
Datasheet PDF File PED8810M PDF File

PED8810M
PED8810M

Overview
PED8810M N-Channel Enhancement Mode Power MOSFET Description The PED8810M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protested.
General Features ● VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.
5V RDS(ON) < 20mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM application ●Load switch Schematic diagram DFN3x3-8L bottom view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sou...


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