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PE9926

Part Number	PE9926
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	PE9926 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE9926 uses advanced trench technology and design to pro...
Datasheet	PE9926 PDF File

Overview

PE9926 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES ● VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.
5V RDS(ON) < 38mΩ @ VGS=2.
5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment SOP-8 top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source ...

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