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PE60N70

semi one
Part Number PE60N70
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET PE60N70 Description The PE60N70 uses advanced trench technology and design to ...
Datasheet PDF File PE60N70 PDF File

PE60N70
PE60N70

Overview
N-Channel Enhancement Mode Power MOSFET PE60N70 Description The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.
2mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply Schematic diagram Marking and pin assignm...


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