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PE02N05A

Part Number	PE02N05A
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	PE02N05A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE02N05A uses advanced trench technology to provide e...
Datasheet	PE02N05A PDF File

Overview

PE02N05A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE02N05A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS =60V,ID =2.
8A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery Switch ●DC/DC Converter D G S Schematic diagram Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS ...

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