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PE025N03

semi one
Part Number PE025N03
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The PE025N03 uses advanced trench technology and design to provide e...
Datasheet PDF File PE025N03 PDF File

PE025N03
PE025N03

Overview
N-Channel Enhancement Mode Power MOSFET Description The PE025N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =20V,ID =110A RDS(ON) <2.
0 mΩ @ VGS=4.
5V RDS(ON) <2.
5mΩ @ VGS=2.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PE025N03 Schematic diagram PDFN5x6-8L t...


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