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AFN9803S

Alfa-MOS
Part Number AFN9803S
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology 65 General Description AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology ...
Datasheet PDF File AFN9803S PDF File

AFN9803S
AFN9803S

Overview
Alfa-MOS Technology 65 General Description AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L ) AFN9803S 30V N-Channel Enhancement Mode MOSFET Features 30V/40A,RDS(ON)=2.
8mΩ@VGS=10V 30V/32A,RDS(ON)=3.
8mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application OR-ing Server DC/DC Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
Part Marking Package AFN9803S AFN9803ST220TG AAAAAA TO-220-3L ϡʳ A Lot code ϡʳ B Date code BBBBBB ϡʳ AFN9803ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.
Rev.
A Jan.
2014 Description Gate Drain Source Unit Tube Quantity 50 EA www.
alfa-mos.
com Page 1 Alfa-MOS Technology AFN9803S ...


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