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AFP6679S

Alfa-MOS
Part Number AFP6679S
Manufacturer Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP6679S PDF File

AFP6679S
AFP6679S

Overview
Alfa-MOS Technology General Description AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L ) AFP6679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)= 9.
8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Switch Load switch in high current applications DC/DC converters Pin Define Pin 1 2 3 Symbol G D S Ordering Infor...


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