DatasheetsPDF.com

AFN2014

Alfa-MOS
Part Number AFN2014
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Datasheet PDF File AFN2014 PDF File

AFN2014
AFN2014


Overview
Alfa-MOS Technology General Description AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFN2014 20V N-Channel Enhancement Mode MOSFET Features 20V/ 10A,RDS(ON)=14mΩ@VGS=4.
5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.
5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marking Package AFN2014T252RG 2014 TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN2014T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.
Rev.
A Nov.
2010 Description Gate Source Drain Unit Tape ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)