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AFN3006S

Alfa-MOS
Part Number AFN3006S
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN3006S PDF File

AFN3006S
AFN3006S

Overview
Alfa-MOS Technology General Description AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFN3006S 30V N-Channel Enhancement Mode MOSFET Features 30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/30A,RDS(ON)=9mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Buck Converter − High Side − Low Side Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marking Package AFN3006ST252RG 3006S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3006ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.
Rev.
A Jan.
2012 Description Gate Source Drain Unit Tape & Reel Quantity 2...


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