DatasheetsPDF.com

AFN3019S

Alfa-MOS
Part Number AFN3019S
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN3019S PDF File

AFN3019S
AFN3019S


Overview
Alfa-MOS Technology General Description AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFN3019S 30V N-Channel Enhancement Mode MOSFET Features  30V/35A,RDS(ON)=9mΩ@VGS=10V  30V/20A,RDS(ON)=13mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  TO-252-2L package design Application  Buck Converter − Low Side  Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marking Package AFN3019ST252RG 3019S TO-252-2L ※ A Lot code ※ B Date code ※ AFN3019ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp.
Rev.
B June 2018 Description Gate Source Drain Unit Tape & Reel ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)