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AFP2125S

Alfa-MOS
Part Number AFP2125S
Manufacturer Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Published Dec 11, 2018
Detailed Description Alfa-MOS Technology General Description AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP2125S PDF File

AFP2125S
AFP2125S

Overview
Alfa-MOS Technology General Description AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L ) AFP2125S 200V P-Channel Enhancement Mode MOSFET Features -200V/-0.
5A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.
3A,RDS(ON)=2600 mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV) Diode design–in SOT-23-3L package design Application Active Clamp Circuits in DC/DC Power Supplies Load switch Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
Part Marking Package AFP2125SS23RG 21SYW SOT-23-3L ϡʳ 21S parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / ...


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