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SSC8129GQ4

AFSEMI
Part Number SSC8129GQ4
Manufacturer AFSEMI
Description P-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8129GQ4 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 9mR@-4V5V 13mR@-2V5 ID -18A ...
Datasheet PDF File SSC8129GQ4 PDF File

SSC8129GQ4
SSC8129GQ4

Overview
SSC8129GQ4 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 9mR@-4V5V 13mR@-2V5 ID -18A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.
5V~25V) such as load switch and battery protection.
 Package Information SSC-1V0 Package: DFN3X3 Symbol A A1 A3 D E D1 E1 k b e L Dimenions Millimeters Min.
Max.
0.
700/0.
800 0.
800/0.
900 0.
000 0.
050 0.
203R...


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