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SSC8039GT3

AFSEMI
Part Number SSC8039GT3
Manufacturer AFSEMI
Description P-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8039GT3 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -11A ...
Datasheet PDF File SSC8039GT3 PDF File

SSC8039GT3
SSC8039GT3

Overview
SSC8039GT3 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -11A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.
5V~25V) such as load switch and battery protection.
 Package Information SSC-1V0 http://www.
afsemi.
com 1/5 Analog Future SSC8039GT3  Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Ratings 30 ±20 11 28 2.
5 -55 to +150 Unit V V A W °C  Electrical Characteristics @TA = 25℃ un...


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