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SSC8164GS6

AFSEMI
Part Number SSC8164GS6
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8164GS6 N-channel Small Switching MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 1.1R@10V 1.5R@4V5...
Datasheet PDF File SSC8164GS6 PDF File

SSC8164GS6
SSC8164GS6

Overview
SSC8164GS6 N-channel Small Switching MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 1.
1R@10V 1.
5R@4V5 ID 400mA ESD 500V  Load Switch  Portable Devices  DCDC Conversion  Pin Configuration  General Description Top View D This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and 3 DMOS trench technology .
This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
12  Ordering Information GS Device SSC8164GS6 Marking 8164 Package SOT23 Qty per Reel 3000 Reel Size 7 Inch SSC-V1.
0 http://www.
afsemi.
com 1/6 Analog Future SSC8164GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Drain-source voltage VDSS 60 Gate-source voltage VGSS ±20 Drain current - Continuous - Pulse Total power dissipation (Tc=25°C) ID 0.
4 IDM 0.
8 PD 0.
45 Channel temperatur...


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