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SSC8136GT4

Part Number	SSC8136GT4
Manufacturer	AFSEMI
Description	N-Channel Enhancement Mode MOSFET
Published	Dec 15, 2018
Detailed Description	SSC8136GT4 N-Channel Enhancement Mode MOSFET  Features VDS 30V VGS ±20V RDSon TYP 3.5mR@10V 4.8mR@4V5 ID 106A  ...
Datasheet	SSC8136GT4 PDF File

Overview

SSC8136GT4 N-Channel Enhancement Mode MOSFET  Features VDS 30V VGS ±20V RDSon TYP 3.
5mR@10V 4.
8mR@4V5 ID 106A  Applications  Desktop Computer  Notebook  DC-DC converter  Pin configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
S D G  Package Information SSC-V1.
0 Unit: mm TO220 http://www.
afsemi.
com 1/5 Analog Future SSC8136GT4  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) ID IDM Total Power Dissipation (Note 1) TC=25°C TC=25°C Operating and Storage Junction Temperature Range TJ, TSTG  Electrical Characteristics @ TA = 25°C unless otherwise noted Limit 30 ±20 106 500 300 150 -55 to 150 Unit V V A A W W °C Parameter Symb...

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SSC8136GT4 N-Channel Enhancement Mode MOSFET - AFSEMI

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