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SSC8160GS6

AFSEMI
Part Number SSC8160GS6
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8160GS6 N-channel Small Switching MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@4V5 ID 300mA ESD 3...
Datasheet PDF File SSC8160GS6 PDF File

SSC8160GS6
SSC8160GS6

Overview
SSC8160GS6 N-channel Small Switching MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@4V5 ID 300mA ESD 3kV   General Description This device is an N-Channel enhancement mode MOSFET, with low on-resistance, fast switching speed and low threshold voltage (2V), it is ideal for portable equipment.
Applications  Direct Logic-Level Interface: TTL/CMOS  Drivers: Relays, Solenoids, Lamps, Hammers,  Display, Memories, Transistors, etc.
 Battery Operated Systems  Solid-State Relays Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Unit:mm SSC-V1.
0 http://www.
afsemi.
com 1/4 Analog Future SSC8160GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Drain current - Continuous - Pulse Total power dissipation (Tc=25°C) ID IDM PD*1 300 800 350 mA mW Channel temperature TCH -55 ~ +150 °C ...


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