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SSC8062GS1

AFSEMI
Part Number SSC8062GS1
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8062GS1 N-Channel Enhancement Mode Power MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 30mR@10V 3...
Datasheet PDF File SSC8062GS1 PDF File

SSC8062GS1
SSC8062GS1

Overview
SSC8062GS1 N-Channel Enhancement Mode Power MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6A  Load Switcing;  PWM application  General Description  Pin configuration SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON).
It is particularly suitable for DCDC conversion and motor driver.
 Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.
0 http://www.
afsemi.
com 1/5 Analog Future SSC8062GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current Continuous Pulse Total Power Dissipation (note1) Operating and Storage Junction Temperature Range Note1: Surface Mounted on 1in pad area.
VGSS ID IDM PD TJ, TSTG  Electrical Characteristics @ TA = 25°C unless otherwise specified Ratings 60 ±20 6 45 2 -55 to +150 Parameter(note2) Symbol Test Conditions Min Typ OFF CHARACTERISTIC...


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