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SSC8362GS1

Part Number	SSC8362GS1
Manufacturer	AFSEMI
Description	Dual N-Channel Enhancement Mode MOSFET
Published	Dec 15, 2018
Detailed Description	SSC8362GS1 Dual N-Channel Enhancement Mode MOSFET  Features VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6.5A ...
Datasheet	SSC8362GS1 PDF File

Overview

SSC8362GS1 Dual N-Channel Enhancement Mode MOSFET  Features VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6.
5A  General Description This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.
 Package Information  Applications  Inverter;  Pin configuration Top View ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.
afsemi.
com 1/5 Analog Future SSC8362GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Sourc...

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SSC8362GS1 Dual N-Channel Enhancement Mode MOSFET - AFSEMI

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