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SLF4N65S

Maple Semiconductor
Part Number SLF4N65S
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Dec 28, 2018
Detailed Description SLP4N65S/SLF4N65S SLP4N65S/SLF4N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple...
Datasheet PDF File SLF4N65S PDF File

SLF4N65S
SLF4N65S

Overview
SLP4N65S/SLF4N65S SLP4N65S/SLF4N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 4.
0A, 650V, RDS(on) = 2.
5Ω@VGS = 10 V - Low gate charge ( typical 13.
3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65S SLF4N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalan...


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