DatasheetsPDF.com

MS2H20120V1

Maple Semiconductor
Part Number MS2H20120V1
Manufacturer Maple Semiconductor
Description Silicon Carbide Diode
Published Dec 28, 2018
Detailed Description MS2H20120V1 MS2H20120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -Hig...
Datasheet PDF File MS2H20120V1 PDF File

MS2H20120V1
MS2H20120V1

Overview
MS2H20120V1 MS2H20120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Package Type : TO-247-3Lead AC A Absolute Maximum Rating...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)