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STHI10N50FI

STMicroelectronics
Part Number STHI10N50FI
Manufacturer STMicroelectronics
Description HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Published Dec 30, 2018
Detailed Description STHI10N50 STHI10N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA TYPE ST...
Datasheet PDF File STHI10N50FI PDF File

STHI10N50FI
STHI10N50FI

Overview
STHI10N50 STHI10N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA TYPE STHI10N50 STHI10N50FI Voss 500 V 500 V 10 10 A 10 A • HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY • FAST TURN-OFF: tf < 1.
5 P.
s APPLICATIONS: • MOTOR CONTROL N - channel High Injection POWER MOS transistors (IGBT) which feature a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors.
This low resistance is achieved by conductivity modulation of the drain.
These devices are particularly suited to switching motor control applications in consumer equipment such as washing machines and tumble dryers and industrial equipment motor control.
TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM 0 s ABSOLUTE MAXIMUM RATINGS VOS Drain-source voltage (VGS =0) VGS Gate-source voltage lo(e} Drain current (contin.
)at Tc =25°C 10M Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage te...


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