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G60V60DF

Part Number	G60V60DF
Manufacturer	STMicroelectronics
Description	Trench gate field-stop IGBT
Published	Jan 1, 2019
Detailed Description	STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - pro...
Datasheet	G60V60DF PDF File

Overview

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB TO-247 long leads Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.
85 V (typ.
) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1.
Internal schematic diagram C (2 or TAB) Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore, a positive VCE(sat) temperature...

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G60V60DF Trench gate field-stop IGBT - STMicroelectronics

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