DatasheetsPDF.com

SPN230T06

SYNC POWER
Part Number SPN230T06
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Jan 7, 2019
Detailed Description SPN230T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN230T06 is the N-Channel enhancement mode power field eff...
Datasheet PDF File SPN230T06 PDF File

SPN230T06
SPN230T06

Overview
SPN230T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN230T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  60V/230A, RDS(ON)=2.
5mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L and TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-263-2L PART MARKING 2020/05/11 Ver 3 Page 1 SPN230T06 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN230T06T220TGB TO-220-3L SPN230T06T262RGB TO-263-2L ※ SPN230T06T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN230T06T262RGB : Tape&Reel ; Pb – Free ; Halogen - Free Part Marking SPN230T06 SPN230T06 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Energy, Single Pulse @ L=1mH, TA=25℃ Power Dissipation @ TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJc Typical 60 ±20 230 160 500 350 104 -55/150 -55/150 1.
2 Unit V V A A mJ W ℃ ℃ ℃/W 2020/05/11 Ver 3 Page 2 SPN230T06 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min.
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltag...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)