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SPN7002T

SYNC POWER
Part Number SPN7002T
Manufacturer SYNC POWER
Description Dual N-Channel MOSFET
Published Jan 7, 2019
Detailed Description SPN7002T Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002T is the Dual N-Channel enhancement mode field e...
Datasheet PDF File SPN7002T PDF File

SPN7002T
SPN7002T

Overview
SPN7002T Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
 High saturation current capability.
Direct Logic-Level Interface: TTL/CMOS  Battery Operated Systems  Solid-State Relays FEATURES  60V/0.
50A , RDS(ON)=2.
0Ω@VGS=10V  60V/0.
20A , RDS(ON)=4.
0Ω@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD protected  SOT-363 package design PIN CONFIGURATION ( SOT-363 / SC-70-6L ) PART MARKING 2020/04/01 Ver.
2 Page 1 SPN7002T Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPN7002TS36RGB SOT-363 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN7002TS36RGB : Tape Reel ; Pb – Free ; Halogen -Free Part Marking 72T ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage - Continuous VGSS Continuous Drain Current(TJ=150℃) TA=25℃ ID Pulsed Drain Current () IDM Power Dissipation TA=25℃ PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA () Pulse width limited by safe operating area Typical 60 ±20 0.
64 0.
95 1.
35 -55 ~ 150 -55 ~ 150 375 2020/04/0...


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