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I11NM80

STMicroelectronics
Part Number I11NM80
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published Jan 12, 2019
Detailed Description STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220...
Datasheet PDF File I11NM80 PDF File

I11NM80
I11NM80

Overview
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.
35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.
40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.
Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
3 1 D²PAK 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1.
Internal sc...


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