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40H12K

TGD
Part Number 40H12K
Manufacturer TGD
Description N-Channel Enhancement Mode Power MOSFET
Published Jan 15, 2019
Detailed Description Taiwan Goodark Technology Co.,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses a...
Datasheet PDF File 40H12K PDF File

40H12K
40H12K

Overview
Taiwan Goodark Technology Co.
,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =40V,ID =120A RDS(ON) <4.
0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package 40H12K 40H12K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless o...


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