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I4N60

ROUM
Part Number I4N60
Manufacturer ROUM
Description 4A 600V N-channel Enhancement Mode Power MOSFET
Published Jan 16, 2019
Detailed Description 4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanc...
Datasheet PDF File I4N60 PDF File

I4N60
I4N60

Overview
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
VDSS = 600V RDS(on) （TYP)= 2.
1Ω ID = 4A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤2.
5Ω) ● Low Gate Charge(Typical Data:14.
5nC) ● Low Reverse Transfer Capacitances(Typical:4pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturizat...


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