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GWT30V60DF

STMicroelectronics
Part Number GWT30V60DF
Manufacturer STMicroelectronics
Description IGBT
Published Jan 21, 2019
Detailed Description STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed D...
Datasheet PDF File GWT30V60DF PDF File

GWT30V60DF
GWT30V60DF

Overview
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D²PAK TAB 3 2 1 TO-220 TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1.
Internal schematic diagram C (2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.
85 V (typ.
) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore, a positive VCE(...


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