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GB40H65FB

Part Number	GB40H65FB
Manufacturer	STMicroelectronics
Description	Trench gate field-stop IGBT
Published	Jan 21, 2019
Detailed Description	STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK...
Datasheet	GB40H65FB PDF File

Overview

STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C(2, TAB) G(1) E(3) Features  Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current  Low saturation voltage: VCE(sat) = 1.
6 V (typ.
) @ IC = 40 A  Tight parameter distribution  Safe paralleling  Low thermal resistance Applications  Photovoltaic inverters  High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the new HB series of IGBTs, which represents an optimum compromise between cond...

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GB40H65FB Trench gate field-stop IGBT - STMicroelectronics

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