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GP100N30

STMicroelectronics
Part Number GP100N30
Manufacturer STMicroelectronics
Description IGBT
Published Jan 21, 2019
Detailed Description STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ Optimized for sustain and energy recovery circu...
Datasheet PDF File GP100N30 PDF File

GP100N30
GP100N30

Overview
STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ Optimized for sustain and energy recovery circuits in PDP applications.
■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.
3 2 1 TO-220 Figure 1.
Internal schematic diagram lete Product(s) - ObsoleteTable 1.
Device summary soOrder codes Ob STGF100N30 Marking...


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