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STB100N6F7

STMicroelectronics
Part Number STB100N6F7
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 22, 2019
Detailed Description STB100N6F7 N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a D²PAK package Datasheet - production data F...
Datasheet PDF File STB100N6F7 PDF File

STB100N6F7
STB100N6F7

Overview
STB100N6F7 N-channel 60 V, 4.
7 mΩ typ.
,100 A STripFET™ F7 Power MOSFET in a D²PAK package Datasheet - production data Features 7$% Order code VDS RDS(on) max.
ID PTOT STB100N6F7 60 V 5.
6 mΩ 100A 125 W   '3$.
Figure 1.
Internal schematic diagram ' 7$% *  • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
6  $0Y Order code STB100N6F7 Table 1.
Device summary Marking Package 100N6F7 D²PAK Packaging Tape and Reel December 2015 This is information on a product in full production.
DocID027210 Rev 3 1/15 www.
st.
com Contents Contents STB100N6F7 1 Electrical rati...


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