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STP77N6F6

STMicroelectronics
Part Number STP77N6F6
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 22, 2019
Detailed Description STP77N6F6 N-channel 60 V, 6.6 mΩ typ., 77 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet — product...
Datasheet PDF File STP77N6F6 PDF File

STP77N6F6
STP77N6F6

Overview
STP77N6F6 N-channel 60 V, 6.
6 mΩ typ.
, 77 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet — production data Features Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 7.
9 mΩ (VGS=10 V) 77 A 80 W ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
TAB 3 2 1 TO-220 Figure 1.
Internal schematic diagram...


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