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STP80N70F6

STMicroelectronics
Part Number STP80N70F6
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 22, 2019
Detailed Description STP80N70F6 N-channel 68 V, 0.0063 Ω typ., 96 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 package Datasheet − produc...
Datasheet PDF File STP80N70F6 PDF File

STP80N70F6
STP80N70F6

Overview
STP80N70F6 N-channel 68 V, 0.
0063 Ω typ.
, 96 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 package Datasheet − production data Features Order code STP80N70F6 VDSS max.
68 V RDS(on) max.
ID PTOT < 0.
008 Ω 96 A 110 W (VGS= 10 V) ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge TAB 3 2 1 TO-220 Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Figure 1.
Internal sch...


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