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STH110N7F6-2

STMicroelectronics
Part Number STH110N7F6-2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 22, 2019
Detailed Description STH110N7F6-2 N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package Datasheet - production...
Datasheet PDF File STH110N7F6-2 PDF File

STH110N7F6-2
STH110N7F6-2

Overview
STH110N7F6-2 N-channel 68 V, 0.
0053 Ω typ.
,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package Datasheet - production data Features TAB 2 3 1 H2PAK-2 Figure 1.
Internal schematic diagram ' 7$% *  Order code VDS RDS(on)max.
ID PTOT STH110N7F6-2 68 V 0.
0063 Ω 110 A 176 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6   $0Y Order code STH110N7F6-2 Table 1.
Device summary Marking...


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