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STB36N60M6

STMicroelectronics
Part Number STB36N60M6
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 23, 2019
Detailed Description STB36N60M6 N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package Datasheet - production data D2...
Datasheet PDF File STB36N60M6 PDF File

STB36N60M6
STB36N60M6

Overview
STB36N60M6 N-channel 600 V, 85 mΩ typ.
, 30 A MDmesh™ M6 Power MOSFET in a D²PAK package Datasheet - production data D2PAK Figure 1: Internal schematic diagram D (2 TAB ) G(1) Features Order code STB36N60M6 VDS 600 V RDS(on) max.
99 mΩ ID 30 A  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100% avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.
STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum endapplication efficiency.
S(3) Order code STB36N60M6 AM15572V1 Table 1: Device summary Marking Package 36N60M6 D²PAK Packing T...


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