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STB33N60M2

STMicroelectronics
Part Number STB33N60M2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 23, 2019
Detailed Description STB33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package Datasheet - prod...
Datasheet PDF File STB33N60M2 PDF File

STB33N60M2
STB33N60M2

Overview
STB33N60M2 N-channel 600 V, 0.
108 Ω typ.
, 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package Datasheet - production data Features TAB 1 D 2 PAK 3 Figure 1.
Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.
125 Ω ID 26 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • MDmesh™ II technology • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters, resonant converters Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
This revolutionary Power MOSFET a...


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