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STL19N60DM2

STMicroelectronics
Part Number STL19N60DM2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jan 23, 2019
Detailed Description STL19N60DM2 N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode Power MOSFET in a PowerFLAT™ 8x8 HV package...
Datasheet PDF File STL19N60DM2 PDF File

STL19N60DM2
STL19N60DM2

Overview
STL19N60DM2 N-channel 600 V, 0.
280 Ω typ.
, 11 A MDmesh™ DM2 with fast diode Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - preliminary data Features 6  6  6  *  %RWWRPYLHZ '  3RZHU)/$7Œ[+9 Figure 1.
Internal schematic diagram D(3) Order code VDS @ TJmax RDS(on)max STL19N60DM2 650 V 0.
320 Ω ID 11 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications G(1) S(2) AM01476v6 Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series.
It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STL19N60DM2 Table 1.
Device summary Marking Package 19N60DM2 ...


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