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STL9N60M2

STMicroelectronics
Part Number STL9N60M2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jan 24, 2019
Detailed Description STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datash...
Datasheet PDF File STL9N60M2 PDF File

STL9N60M2
STL9N60M2

Overview
STL9N60M2 N-channel 600 V, 0.
76 Ω typ.
, 4.
8 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data 1 2 3 4 PowerFLAT™ 5x6 HV Features Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.
86 Ω 4.
8 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Figure 1.
Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL9N60M2 Table 1.
Device summary Marking Package ...


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