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STD3NM60N

STMicroelectronics
Part Number STD3NM60N
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jan 24, 2019
Detailed Description STD3NM60N N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package Datasheet — preliminary data Features ...
Datasheet PDF File STD3NM60N PDF File

STD3NM60N
STD3NM60N

Overview
STD3NM60N N-channel 600 V, 1.
6 Ω, 3.
3 A, MDmesh™ II Power MOSFET in DPAK package Datasheet — preliminary data Features Order codes STD3NM60N VDSS @TJmax 650 V RDS(on) max.
< 1.
8 Ω ID 3.
3 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 1 DPAK Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
Figure 1...


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