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STD16N65M2

STMicroelectronics
Part Number STD16N65M2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jan 24, 2019
Detailed Description STD16N65M2 Datasheet N-channel 650 V, 320 mΩ typ., 11 A MDmesh M2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB...
Datasheet PDF File STD16N65M2 PDF File

STD16N65M2
STD16N65M2

Overview
STD16N65M2 Datasheet N-channel 650 V, 320 mΩ typ.
, 11 A MDmesh M2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS at TJ max.
RDS(on) max.
ID STD16N65M2 710 V 360 mΩ 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology.
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status link STD16N65M2 Product summary Order code STD16N65M2 Marking 16N65M2 Package DPAK Packing Tape and reel DS10675 - Rev 2 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STD16N65M2 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width is limited by safe operating area.
2.
ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V.
3.
VDS ≤ 520 V.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA(1) Thermal resistance, junction-to-ambient 1.
When mounted on 1 inch2 FR-4, 2 Oz copper board.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.
) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Value ±25 11 6.
9 44 110 15 50 -55 to 150 Unit V A ...


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