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STL60P4LLF6

STMicroelectronics
Part Number STL60P4LLF6
Manufacturer STMicroelectronics
Description P-CHANNEL POWER MOSFET
Published Jan 25, 2019
Detailed Description STL60P4LLF6 Datasheet P-channel 40 V, 11.5 mΩ typ., 60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT ...
Datasheet PDF File STL60P4LLF6 PDF File

STL60P4LLF6
STL60P4LLF6

Overview
STL60P4LLF6 Datasheet P-channel 40 V, 11.
5 mΩ typ.
, 60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS STL60P4LLF6 40 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max.
14 mΩ ID 60 A Applications • Switching applications AM01475v4 Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STL60P4LLF6 Product summary Order code STL60P4LLF6 Marking Package Packing 60P4LLF6 PowerFLAT 5x6 Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
DS10066 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com STL60P4LLF6 Electrical ratings 1 Note: Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(1)(3) Drain current (pulsed) Drain current (continuous) at Tpcb = 25 °C ID(2) Drain current (continuous) at Tpcb = 100 °C IDM(2)(3) Drain current (pulsed) PTOT(1) Total power dissipation at TC = 25 °C PTOT(2) Total power dissipation at Tpcb = 25 °C Derating factor(2) Tstg Storage temperature TJ Maximum junction temperature 1.
The value is limited by Rthj-case.
2.
The value is limited by Rthj-pcb.
3.
Pulse width is limited by safe operating area.
Value 40 ±20 60 42 240 13 9.
3 52 100 4.
8 0.
03 -55 to 175 175 Table 2.
Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb(1) Thermal resistance junction-pcb, single operation 1.
When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.
Value 1.
5 31.
3 For the P-channel Power MOSFET,...


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