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STD52P3LLH6

STMicroelectronics
Part Number STD52P3LLH6
Manufacturer STMicroelectronics
Description P-CHANNEL POWER MOSFET
Published Jan 25, 2019
Detailed Description STD52P3LLH6 Datasheet P-channel 30 V, 10 mΩ typ., 52 A, STripFET H6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, T...
Datasheet PDF File STD52P3LLH6 PDF File

STD52P3LLH6
STD52P3LLH6

Overview
STD52P3LLH6 Datasheet P-channel 30 V, 10 mΩ typ.
, 52 A, STripFET H6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes V DSS STD52P3LLH6 30 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max 12 mΩ ID 52 A PTOT 70 W Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.
Product status link STD52P3LLH6 Product summary Order code STD52P3LLH6 Marking Package Packing 52P3LLH6 DPAK Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
DS10148 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com STD52P3LLH6 Electrical ratings 1 Note: Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature TJ Max.
operating junction temperature 1.
Pulse width limited by safe operating area.
Symbol Rthj-case Table 2.
Thermal data Parameter Thermal resistance junction-case max Value 30 ±20 52 37.
5 208 70 -55 to 175 175 Unit V V A A A W °C °C Value 2.
14 Unit °C/W For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
DS10148 - Rev 3 page 2/15 STD52P3LLH6 Electrical characteristics 2 Note: Electrical characteristics (TC = 25 °C unless otherwise specified) Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Table 3.
Static Parameter Drain-source breakdown Voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static dr...


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