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60R190P

MagnaChip
Part Number 60R190P
Manufacturer MagnaChip
Description N-channel MOSFET
Published Jan 28, 2019
Detailed Description MMP60R190P Datasheet MMP60R190P 600V 0.19Ω N-channel MOSFET  Description MMP60R190P is power MOSFET using Magnachip’s...
Datasheet PDF File 60R190P PDF File

60R190P
60R190P

Overview
MMP60R190P Datasheet MMP60R190P 600V 0.
19Ω N-channel MOSFET  Description MMP60R190P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.
It will provide much high efficiency by using optimized charge coupling technology.
These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
 Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.
19 3 20 51  Features Unit V Ω V A nC GDS D G S  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMP60R190PTH Marking 60R190P Temp.
Range -55 ~ 150℃ Package TO-220 Jun.
2021 Revision 1.
2 1d Packing Tube RoHS Status Halogen Free Magnachip Semiconductor Ltd.
MMP60R190P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Symbol VDSS VGSS ID IDM PD EAS dv/dt dv/dt Tstg Tj Rating 600 ±30 20 12.
7 60 154 420 50 15 -55 ~150 150 Unit V V A A A W mJ V/ns V/ns ℃ ℃ Note TC=25℃ TC=100℃  Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 0.
81 62.
5 Unit ℃/W ℃/W  Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source Breakdown voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On State Resistance Symbol Min.
Typ.
M...


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