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CS7N65A8HD

Huajing Microelectronics
Part Number CS7N65A8HD
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Jan 30, 2019
Detailed Description Silicon N-Channel Power MOSFET CS7N65 A8HD ○R General Description： CS7N65 A8HD, the silicon N-channel Enhanced VDMOS...
Datasheet PDF File CS7N65A8HD PDF File

CS7N65A8HD
CS7N65A8HD

Overview
Silicon N-Channel Power MOSFET CS7N65 A8HD ○R General Description： CS7N65 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Puls...


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